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| 2SA1190, 2SA1191 Silicon PNP Epitaxial Application * Low frequency low noise amplifier * Complementary pair with 2SC2855 and 2SC2856 Outline 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1190 -90 -90 -5 -100 100 400 150 -55 to +150 2SA1191 -120 -120 -5 -100 100 400 150 -55 to +150 Unit V V V mA mA mW C C 2 2SA1190, 2SA1191 Electrical Characteristics (Ta = 25C) 2SA1190 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1191 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, I C = -2 mA*2 I C = -10 mA, I B = -1 mA*2 Min -90 -90 -5 -- -- 250 -- -- -- -- -- Typ -- -- -- -- -- -- -120 -- -120 -- -5 -- -- 250 -- -- -- -- VCE(sat) VBE(sat) -0.05 -0.15 -- -0.7 130 3.2 0.15 -1.0 -- -- 1.5 -- -- -- -- -0.05 -0.15 V -0.7 130 3.2 0.15 -1.0 -- -- 1.5 V MHz pF dB Gain bandwidth product f T Collector output capacitance Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 10 Hz VCB = -6 V, I C = -10 mA, Rg = 0, f = 1 kHz -- 0.2 2.0 -- 0.2 2.0 dB Noise voltage reffered to input en -- 0.7 -- -- 0.7 -- nV/ Hz Notes: 1. The 2SA1190 and 2SA1191 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 3 2SA1190, 2SA1191 4 2SA1190, 2SA1191 5 2SA1190, 2SA1191 6 2SA1190, 2SA1191 7 2SA1190, 2SA1191 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 8 |
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